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CJQ4822 fiches techniques PDF

JCET - Dual N-channel MOSFET

Numéro de référence CJQ4822
Description Dual N-channel MOSFET
Fabricant JCET 
Logo JCET 





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CJQ4822 fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4822 Dual N-Channel MOSFET
V(BR)DSS
30V
RDS(on)MAX
16mΩ@10V 
26mΩ@4.5 V
 
ID
8.5A 
SOP8
DESCRIPTION
The CJQ4822 uses advanced trench technology to provide excellent
RDS(ON) and low gate charge. This device is suitable for use as a load switch
or in PWM applications.
MARKING:
Equivalent Circuit
Q4822= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (t 10s) (note 1)
Pulsed Drain Current (note 2)
Power Dissipation
Thermal Resistance from Junction to Ambient (t 10s) (note 1)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
Value
30
±20
8.5
30
1.4
89
150
-55~+150
Unit
V
V
A
A
W
/W
www.cj-elec.com
1
E,Mar,2016

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