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Numéro de référence | CJQ4822 | ||
Description | Dual N-channel MOSFET | ||
Fabricant | JCET | ||
Logo | |||
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4822 Dual N-Channel MOSFET
V(BR)DSS
30V
RDS(on)MAX
16mΩ@10V
26mΩ@4.5 V
ID
8.5A
SOP8
DESCRIPTION
The CJQ4822 uses advanced trench technology to provide excellent
RDS(ON) and low gate charge. This device is suitable for use as a load switch
or in PWM applications.
MARKING:
Equivalent Circuit
Q4822= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (t ≤10s) (note 1)
Pulsed Drain Current (note 2)
Power Dissipation
Thermal Resistance from Junction to Ambient (t ≤10s) (note 1)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
Value
30
±20
8.5
30
1.4
89
150
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
www.cj-elec.com
1
E,Mar,2016
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Pages | Pages 5 | ||
Télécharger | [ CJQ4822 ] |
No | Description détaillée | Fabricant |
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