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PDF MIC4607 Data sheet ( Hoja de datos )
| Número de pieza | MIC4607 | |
| Descripción | Three-Phase MOSFET Driver | |
| Fabricantes | Microchip | |
| Logotipo |  |
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MIC4607
85V, Three-Phase MOSFET Driver with Adaptive
Dead-Time, Anti-Shoot-Through and Overcurrent
Protection
Features
• Gate Drive Supply Voltage Up To 16V
• Overcurrent Protection
• Drives High-Side And Low-Side N-Channel
MOSFETs With Independent Inputs Or With A
Single PWM Signal
• TTL Input Thresholds
• On-Chip Bootstrap Diodes
• Fast 35 ns Propagation Times
• Shoot-Through Protection
• Drives 1000 pF Load With 20 ns Rise And Fall
Times
• Low Power Consumption
• Supply Undervoltage Protection
• –40°C to +125°C Junction Temperature Range
Applications
• Three-Phase and BLDC Motor Drives
• Three-Phase Inverters
General Description
The MIC4607 is an 85V, three-phase MOSFET driver.
The MIC4607 features a fast (35 ns) propagation delay
time and a 20 ns driver rise/fall time for a 1 nF
capacitive load. TTL inputs can be separate high- and
low-side signals or a single PWM input with high and
low drive generated internally. High- and low-side
outputs are guaranteed to not overlap in either mode.
The MIC4607 includes overcurrent protection as well
as a high-voltage internal diode that charges the
high-side gate drive bootstrap capacitor.
A robust, high-speed, and low-power level shifter
provides clean level transitions to the high-side output.
The robust operation of the MIC4607 ensures that the
outputs are not affected by supply glitches, HS ringing
below ground, or HS slewing with high-speed voltage
transitions. Undervoltage protection is provided on both
the low-side and high-side drivers.
The MIC4607 is available in a both a 28-pin 4 mm ×
5 mm QFN and 28-pin TSSOP package with an
operating junction temperature range of –40°C to
+125°C.
Typical Application Circuit
MIC4607
Three-Phase Motor Driver
DS20005610A-page 1
2016 Microchip Technology Inc.
1 page  
MIC4607
DC CHARACTERISTICS (Note 1, 2)
Electrical Characteristics: Unless otherwise indicated, VDD = VxHB = 12V; VEN = 5V; VSS = VHS = 0V; No load on
xLO or xHO; TA = 25°C; unless noted. Bold values indicate –40°C< TJ < +125°C.
Parameters
Sym.
Min.
Typ.
Max. Units
Conditions
Supply Current
VDD Quiescent Current
IDD — 390
VDD Shutdown Current
IDDSH
— 2.2
— 58
VDD Operating Current
Per Channel xHB Quiescent
Current
IDDO
IHB
Per Channel xHB Operating
Current
IHBO
xHB to VSS Current, Quiescent
xHB to VSS Current, Operating
IHBS
IHBSO
Input (TTL: xLI, xHI, xPWM, EN) (Note 3)
Low-Level Input Voltage
High-Level Input Voltage
Input Voltage Hysteresis
VIL
VIH
VHYS
— 0.6
— 20
— 30
— 0.05
— 30
——
2.2 —
0.1
Input Pull-Down Resistance
RI 100 300
50 130
Undervoltage Protection
VDD Falling Threshold
VDD Threshold Hysteresis
xHB Falling Threshold
xHB Threshold Hysteresis
VDDR
VDDH
VHBR
VHBH
3.8 4.4
— 0.25
4.0 4.4
— 0.25
Overcurrent Protection
Rising Overcurrent Threshold
VILIM+
175 200
ILIM to Gate Propagation
Delay
tILIM_PROP
—
70
750 μA xLI = xHI = 0V
xLI = xHI = 0V;
10 EN = 0V with
μA HS = floating
150
xLI = xHI = 0V ; EN = 0V;
HS = 0V
1.5 mA f = 20 kHz
75
μA
xLI = xHI = 0V or
xLI = 0V and xHI = 5V
400 μA f = 20 kHz
5 μA VxHS = VxHB = 90V
300 μA f = 20 kHz
0.8 V —
— V—
— V—
xLI and xHI Inputs
500 kΩ (-1 Version)
250 xPWM Input (-2 Version)
4.9 V —
— V—
4.9 V —
— V—
225 mV (VILIM+ – VILIM–)
— ns VILIM+ = 0.5V peak
Fault Circuit
FLT/ Output Low Voltage
Rising DLY Threshold
DLY Current Source
Fault Clear Time
VOLF
VDLY+
IDLY
tFCL
— 0.2 0.5 V VILIM = 1V; IFLT/ = 1 mA
— 1.5 — V —
0.3 0.44 0.6 μA VDLY = 0V
— 670 — μs CDLY = 1 nF
Bootstrap Diode
Low-Current Forward Voltage
VDL
—
0.4
0.70
V IVDD-xHB = 100 μA
High-Current Forward Voltage
VDH
— 0.8
1 V IVDD-xHB = 50 mA
Note 1: “x” in front of a pin name refers to either A, B or C phase. (e.g. xHI can be either AHI, BHI or CHI).
2: Specification for packaged product only.
3: VIL(MAX) = maximum positive voltage applied to the input which will be accepted by the device as a logic
low.
VIH(MIN) = minimum positive voltage applied to the input which will be accepted by the device as a logic
high.
4: Guaranteed by design. Not production tested.
2016 Microchip Technology Inc.
DS20005610A-page 5
5 Page 
MIC4607
55
50
VxHS = 0V
CL=1nF
45 FALL TIME
40 VDD = 5.5V
RISE TIME
VDD = 5.5V
35
30
25
20
15
10
5
-50
FALL TIME RISE TIME
VDD = 12V VDD = 12V
-25 0 25 50 75 100 125
TEMPERATURE (°C)
FIGURE 2-19:
Temperature.
Rise/Fall Time vs.
130
120 VxHS = 0V
CL=1nF
110
125°C
TAMB = 25°C
100 25°C
90
80 –40°C
70
60
50
40
30
20
10
5 6 7 8 9 10 11 12 13 14 15 16
VDD (V)
FIGURE 2-20:
Dead Time vs. VDD Voltage.
130
120
VDD= 12V
VxHS = 0V
110 CL=1nF
VDD = 5.5V
100
90
80
70 VDD = 16V
60 VDD = 12V
50
40
30
20
10
-50 -25 0 25 50 75 100 125
TEMPERATURE (°C)
FIGURE 2-21:
Dead Time vs. Temperature.
4.9
4.8 VHB RISING
VxHS = 0V
4.7
4.6 VHB FALLING
4.5
4.4
4.3
4.2 VDD RISING
4.1
4
-50
VDD FALLING
-25 0 25 50 75
TEMPERATURE (°C)
100 125
FIGURE 2-22:
Temperature.
VDD/VHB UVLO vs.
FIGURE 2-23:
VDD Voltage.
Overcurrent Threshold vs.
FIGURE 2-24:
Temperature.
Overcurrent Threshold vs.
2016 Microchip Technology Inc.
DS20005610A-page 11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MIC4607.PDF ] | |
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