DataSheetWiki


PA410BT fiches techniques PDF

UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence PA410BT
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





1 Page

No Preview Available !





PA410BT fiche technique
PA410BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
140mΩ @VGS = 10V
ID
11A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
11
6.8
30
Avalanche Current
IAS 9.7
Avalanche Energy
L = 0.1mH
EAS
4.7
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
38
15
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
3.3
°C / W
62.5
REV 1.0
1 2017/1/16

PagesPages 8
Télécharger [ PA410BT ]


Fiche technique recommandé

No Description détaillée Fabricant
PA410BD N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
PA410BT N-Channel Field Effect Transistor NIKO-SEM
NIKO-SEM
PA410BT N-Channel Enhancement Mode MOSFET UNIKC
UNIKC
PA410BTF N-Channel Field Effect Transistor NIKO-SEM
NIKO-SEM

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche