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Numéro de référence | PA410BT | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
PA410BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
140mΩ @VGS = 10V
ID
11A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
11
6.8
30
Avalanche Current
IAS 9.7
Avalanche Energy
L = 0.1mH
EAS
4.7
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
38
15
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
3.3
°C / W
62.5
REV 1.0
1 2017/1/16
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Pages | Pages 8 | ||
Télécharger | [ PA410BT ] |
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