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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence P046BTFS
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P046BTFS fiche technique
P0460BTF / P046BTFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2.6Ω @VGS = 10V
ID
4A
TO-220F
TO-220FS
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
4
1.5
16
Avalanche Current
IAS 4
Avalanche Energy
L = 10mH
EAS
81
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
25
10
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
5
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16

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