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Numéro de référence | P0860ETF | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
P0860ETF / P0860ETFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
1.05Ω @VGS = 10V
ID
8A
TO-220F
TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
EAS
8
5
25
3.5
61.2
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
36
14
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V, L = 10mH, starting TJ = 25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.4
62.5
UNITS
°C / W
REV 1.0
1 2017/1/23
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Pages | Pages 9 | ||
Télécharger | [ P0860ETF ] |
No | Description détaillée | Fabricant |
P0860ETF | N-Channel Enhancement Mode MOSFET | UNIKC |
P0860ETF | N-Channel Field Effect Transistor | NIKO-SEM |
P0860ETFS | N-Channel Enhancement Mode MOSFET | UNIKC |
P0860ETFS | N-Channel Field Effect Transistor | NIKO-SEM |
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