(PDF) P2610ATFG Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P2610ATFG
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P2610ATFG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 26mΩ @VGS = 10V ID 31A TO-220F 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 31 19 130 Avalanche Current IAS 77 Avalanche Energy L = 0.3mH EAS 900 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Operating Junction & Storage Temperature Range Lead Temperature ( 1/16" from case for 10 sec.) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA RqCS TYPICAL 0.5 MAXIMUM 2.5 62.5 UNITS °C / W Ver 1.0 1 2012/4/13 1 page P2610ATFG N-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/13 5 Page

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PDF P2610ATFG Data sheet ( Hoja de datos )