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P9006ETF fiches techniques PDF

UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence P9006ETF
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P9006ETF fiche technique
P9006ETF
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60 90mΩ @VGS = 10V
ID
-15A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
-15
-9.5
-60
Avalanche Current
IAS -24
Avalanche Energy
L = 0.1mH
EAS
28
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
35
14
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.6
60
UNITS
°C / W
Ver 1.0
1 2012/4/16

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