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UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence PA610DTF
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PA610DTF fiche technique
PA610DTF
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-100V
200mΩ @VGS = -10V
ID
-10A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-10
-8
-40
Avalanche Current
IAS -28
Avalanche Energy
L = 0.1mH
EAS
39
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
36
23
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
RqJS
TYPICAL
0.5
MAXIMUM UNITS
3.5
62.5 °C / W
Ver 1.0
1 2012/4/16

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