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UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence PZ513BA
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PZ513BA fiche technique
PZ513BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
115mΩ @VGS = -4.5V
ID
-1.3A
SOT-323
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-1.3
-1
-10
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.3
0.2
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient2
RqJA
360
1limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
°C / W
REV 1.0 1 2015/6/8

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