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PDF P0470ED Data sheet ( Hoja de datos )
| Número de pieza | P0470ED | |
| Descripción | N-Channel Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
N-Channel Enhancement Mode
P0470ED
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
700V
2.9Ω
ID
4A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
700
±30
4
2.4
16
2
20
78
31
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V, L = 10mH ,Starting TJ = 25°C
TYPICAL
MAXIMUM
1.6
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
700
V
23
4
IGSS VDS = 0V, VGS = ±30V
±100 nA
VDS = 700V, VGS = 0V , TC = 25 °C
IDSS
VDS = 560V, VGS = 0V , TC = 125 °C
1
A
10
REV 1.0
1
F-47-5
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P0470ED.PDF ] | |
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