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Numéro de référence | PK5G6EA | ||
Description | N-Channel Field Effect Transistor | ||
Fabricant | NIKO-SEM | ||
Logo | |||
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PK5G6EA
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 2.4mΩ
ID
87A
Features
• Pb−Free, Halogen Free and RoHS compliant.
• Low RDS(on) to Minimize Conduction Losses.
• Ohmic Region Good RDS(on) Ratio.
• Optimized Gate Charge to Minimize Switching Losses.
• Products Integrated ESD diode with ESD Protected.
Applications
• Protection Circuits Applications.
• Logic/Load Switch Circuits Applications.
ESD Protected Gate
D D DD
#1 S S S G
G. GATE
D. DRAIN
S. SOURCE
100% UIS Tested
100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current4
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
Avalanche Current
TA = 25 °C
TA = 70 °C
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation3
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
LIMITS
20
±12
87
55
120
31
25
51
130
31
12.5
4
2.6
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
REV1.0
1
F-40-5
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Pages | Pages 5 | ||
Télécharger | [ PK5G6EA ] |
No | Description détaillée | Fabricant |
PK5G6EA | N-Channel Field Effect Transistor | NIKO-SEM |
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