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Datasheet PKCH2BB-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
PKC Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PKC-136 | PEAK CLAMP ®
PKC-136
PEAK CLAMP
Application Specific Discretes ASD™
MAIN PRODUCT CHARACTERISTICS VBR VDRM P 160Vdc 700Vdc 1.5W
FEATURES Protection of the Mosfet in flyback power supply TRANSIL™ and blocking diode in a single package
s s
BENEFITS Accurate voltage clamping regardless load Reduced curre  ST Microelectronics data | | |
| 2 | PKC136 | PEAK CLAMP ®
PKC-136
PEAK CLAMP
Application Specific Discretes ASD™
MAIN PRODUCT CHARACTERISTICS VBR VDRM P 160Vdc 700Vdc 1.5W
FEATURES Protection of the Mosfet in flyback power supply TRANSIL™ and blocking diode in a single package
s s
BENEFITS Accurate voltage clamping regardless load Reduced curre ST Microelectronics data | | |
| 3 | PKC16BB | N-Channel Enhancement Mode MOSFET PKC16BB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 7mΩ @VGS = 10V
ID 51A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS 30 V
Ga  UNIKC mosfet | | |
| 4 | PKC2111 | (PKC2111 / PKC2113) DC/DC Converter PKC 2000 I
15–18 W DC/DC Power Modules 24 V Input Series
• Regulated single, dual and triple outputs • Low profile 10.7 mm (0.42 in.), allows 0.8" board pitch – 0.6 in. if recessed in the printed board • Proven MTBF >2,000,000 hours at +75 °C case temperature and a r  Ericsson Microelectronics converter | | |
| 5 | PKC2113 | (PKC2111 / PKC2113) DC/DC Converter PKC 2000 I
15–18 W DC/DC Power Modules 24 V Input Series
• Regulated single, dual and triple outputs • Low profile 10.7 mm (0.42 in.), allows 0.8" board pitch – 0.6 in. if recessed in the printed board • Proven MTBF >2,000,000 hours at +75 °C case temperature and a r Ericsson Microelectronics converter | | |
| 6 | PKC26BB | N-Channel Enhancement Mode MOSFET PKC26BB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 1.6mΩ @VGS = 10V
ID4 151A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuou UNIKC mosfet | | |
| 7 | PKC46DY | Dual N-Channel Enhancement Mode MOSFET PKC46DY
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 1.9mΩ @VGS = 10V
30V 9.5mΩ @VGS = 10V
ID CH. 99A Q2 34A Q1
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL CH.
LIMITS
Drain-Source Voltage
Q2 VD UNIKC mosfet | |
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