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NIKO-SEM - N-Channel Field Effect Transistor

Numéro de référence PK664BA
Description N-Channel Field Effect Transistor
Fabricant NIKO-SEM 
Logo NIKO-SEM 





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PK664BA fiche technique
NIKO-SEM
N-ChFanienldelEEfnfehcatnTcreamnseinsttoMrodeHalogen-FrePe &KPDL6eF6aNd4-5BFxr6eAPe
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 2.4mΩ
ID
114A
D
G
S
D D DD
#1 S S S G
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
Avalanche Current
TA = 25 °C
TA = 70 °C
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
LIMITS
30
±20
114
72
250
23
18
48
115
59
23
2.4
1.5
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
Junction-to-Case
RJA
RJC
51
°C / W
2.1
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
3ePnavcikroangme elimntitwaittihonTcAu=r2re5n°Ct i.s 51A.
REV 1.1
1
G-25-5

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