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Numéro de référence | P5506HPG | ||
Description | Dual N-Channel Field Effect Transistor | ||
Fabricant | NIKO-SEM | ||
Logo | |||
NIKO-SEM
Dual N-Channel Enhancement Mode
P5506HPG
Field Effect Transistor
DIP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60 63mΩ
ID
4A
D1 D1 D2 D2
#1S1 G1 S2 G2
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 70 °C
TC = 25 °C
TC = 70 °C
VDS
VGS
ID
IDM
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
LIMITS
60
±20
4
2.5
30
1.7
0.6
-55 to 150
UNITS
V
V
A
W
°C
MAXIMUM
72
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
Drain-Source On-State Resistance1
Forward Transconductance1
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 3.5A
VGS = 10V, ID = 4A
VDS = 10V, ID = 4A
LIMITS
UNIT
MIN TYP MAX
60
1.0 1.5 2.5
V
±100 nA
1
10 µA
30 A
64 79
mΩ
51 63
12 S
REV0.91
1 Jan-03-2011
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Pages | Pages 4 | ||
Télécharger | [ P5506HPG ] |
No | Description détaillée | Fabricant |
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