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PDF P9008HV Data sheet ( Hoja de datos )
| Número de pieza | P9008HV | |
| Descripción | Dual N-Channel Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
Dual N-Channel Enhancement Mode Field
P9008HV
Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80 90mΩ
ID
5A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
LIMITS
80
±25
5
4
25
22
25
2
1.28
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient
RJA
62.5 °C / W
Junction-to-Lead
RJL
1Pulse width limited by maximum junction temperature.
35 °C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±25V
VDS = 64V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 70 °C
VDS = 5V, VGS = 10V
LIMITS
UNIT
MIN TYP MAX
80
2 2.5 3.5
V
±100 nA
1
A
10
25 A
REV 1.4
1 Oct-21-2009
1 page  
NIKO-SEM
Dual N-Channel Enhancement Mode Field
P9008HV
Effect Transistor
SOP-8
Halogen-Free & Lead-Free
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-5
Single Pulse
10-4
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3
10-2
10-1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1 t2
1. Duty Cycle, D=
2. RthJA = 65°CW
t1
t2
3. TJM - TA =PDMZthJA(t)
4. Surface Mounted
1 10
60
REV 1.4
5 Oct-21-2009
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet P9008HV.PDF ] | |
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