(PDF) WSB5503W Datasheet - Middle Power Schottky Barrier Diode

Número de pieza	WSB5503W
Descripción	Middle Power Schottky Barrier Diode
Fabricantes	Will Semiconductor
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No Preview Available ! WSB5503W Middle Power Schottky Barrier Diode Features  1A Average rectified forward current  Low forward voltage  Low leakage current  Small package SOD-323 WSB5503W Http://www.sh-willsemi.com SOD-323 Applications  Switching circuit  Middle current rectification Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward current (1) Junction temperature Operating temperature Storage temperature Circuit Marking Symbol VRM VR IO IPK TJ Topr Tstg Value 40 40 1 25 125 -40 ~ 85 -55 ~ 150 Unit V V A A OC OC OC Electronics characteristics (TA=25oC) Parameter Symbol Condition Forward voltage Reverse current Junction capacitance VF IF=1A IR VR=VR CJ VR=4V, F=1MHz Order Informations Device Package WSB5503W-2/TR SOD-323 Note 1 : Pulse Width=1us, Single Pulse Note 2 : * = Month code (A~Z); . L = Device code Min. - - - Typ. 0.5 10 - Marking *.L (2) Max. 0.57 50 120 Unit V uA pF Shipping 3000/Reel&Tape Will Semiconductor Ltd. 1 Jan, 2014 - Rev. 1.1 1 page

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PDF WSB5503W Data sheet ( Hoja de datos )