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Número de pieza | MCP6V61 | |
Descripción | 1 MHz Zero-Drift Op Amps | |
Fabricantes | Microchip | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MCP6V61 (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
No Preview Available ! MCP6V61/1U/2/4
80 µA, 1 MHz Zero-Drift Op Amps
Features
• High DC Precision:
- VOS Drift: ±15 nV/°C (maximum, VDD = 5.5V)
- VOS: ±8 µV (maximum)
- AOL: 125 dB (minimum, VDD = 5.5V)
- PSRR: 117 dB (minimum, VDD = 5.5V)
- CMRR: 120 dB (minimum, VDD = 5.5V)
- Eni: 0.54 µVP-P (typical), f = 0.1 Hz to 10 Hz
- Eni: 0.17 µVP-P (typical), f = 0.01 Hz to 1 Hz
• Enhanced EMI Protection:
- Electromagnetic Interference Rejection Ratio
(EMIRR) at 1.8 GHz: 101 dB
• Low Power and Supply Voltages:
- IQ: 80 µA/amplifier (typical)
- Wide Supply Voltage Range: 1.8V to 5.5V
• Small Packages:
- Singles in SC70, SOT-23
- Duals in MSOP-8, 2x3 TDFN
- Quads in TSSOP-14
• Easy to Use:
- Rail-to-Rail Input/Output
- Gain Bandwidth Product: 1 MHz (typical)
- Unity Gain Stable
• Extended Temperature Range: -40°C to +125°C
Typical Applications
• Portable Instrumentation
• Sensor Conditioning
• Temperature Measurement
• DC Offset Correction
• Medical Instrumentation
Design Aids
• SPICE Macro Models
• FilterLab® Software
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
• Application Notes
Related Parts
• MCP6V11/1U/2/4: Zero-Drift, Low Power
• MCP6V31/1U/2/4: Zero-Drift, Low Power
• MCP6V71/1U/2/4: Zero-Drift, 2 MHz
• MCP6V81/1U: Zero-Drift, 5 MHz
• MCP6V91/1U: Zero-Drift, 10 MHz
General Description
The Microchip Technology Inc. MCP6V61/1U/2/4
family of operational amplifiers provides input offset
voltage correction for very low offset and offset drift.
These devices have a gain bandwidth product of
1 MHz (typical). They are unity-gain stable, have
virtually no 1/f noise and have good Power Supply
Rejection Ratio (PSRR) and Common Mode Rejection
Ratio (CMRR). These products operate with a single
supply voltage as low as 1.8V, while drawing
80 µA/amplifier (typical) of quiescent current.
The Microchip Technology Inc. MCP6V61/1U/2/4 op
amps are offered in single (MCP6V61 and
MCP6V61U), dual (MCP6V62) and quad (MCP6V64)
packages. They were designed using an advanced
CMOS process.
Package Types
MCP6V61
SOT-23
MCP6V62
MSOP
VOUT 1
VSS 2
VIN+ 3
5 VDD VOUTA 1
VINA– 2
4 VIN– VINA+ 3
VSS 4
8 VDD
7 VOUTB
6 VINB–
5 VINB+
MCP6V61U
SC70, SOT-23
MCP6V62
2×3 TDFN *
VIN+ 1
VSS 2
VIN– 3
5 VDD VOUTA 1
8 VDD
VINA– 2
4 VOUT VINA+ 3
EP
9
7 VOUTB
6 VINB–
VSS 4
5 VINB+
MCP6V64
TSSOP
VOUTA 1
VINA– 2
VINA+ 3
VDD 4
VINB+ 5
VINB– 6
VOUTB 7
14 VOUTD
13 VIND–
12 VIND+
11 VSS
10 VINC+
9 VINC–
8 VOUTC
* Includes Exposed Thermal Pad (EP); see Table 3-1.
2014-2015 Microchip Technology Inc.
DS20005367B-page 1
1 page MCP6V61/1U/2/4
TABLE 1-2: AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND,
VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 20 kΩ to VL and CL = 30 pF (refer to Figures 1-4 and 1-5).
Parameters
Sym. Min. Typ. Max. Units
Conditions
Amplifier AC Response
Gain Bandwidth Product
GBWP — 1 — MHz
Slew Rate
SR — 0.45 — V/µs
Phase Margin
PM — 60 — °C G = +1
Amplifier Noise Response
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Eni — 0.17 — µVP-P f = 0.01 Hz to 1 Hz
Eni — 0.54 — µVP-P f = 0.1 Hz to 10 Hz
eni — 26 — nV/√Hz f < 2 kHz
ini — 5 — fA/√Hz
Amplifier Distortion (Note 1)
Intermodulation Distortion (AC) IMD — 48 — µVPK VCM tone = 50 mVPK at 1 kHz,
GN = 11, RTI
Amplifier Step Response
Start-Up Time
Offset Correction Settling Time
tSTR
tSTL
Output Overdrive Recovery Time tODR
— 250 —
— 30 —
— 60 —
µs G = +1, 0.1% VOUT settling (Note 2)
µs G = +1, VIN step of 2V,
VOS within 100 µV of its final value
µs G = -10, ±0.5V input overdrive to VDD/2,
VIN 50% point to VOUT 90% point (Note 3)
EMI Protection
EMI Rejection Ratio
EMIRR — 80 —
dB VIN = 0.1 VPK, f = 400 MHz
— 96 —
VIN = 0.1 VPK, f = 900 MHz
— 101 —
VIN = 0.1 VPK, f = 1800 MHz
— 102 —
VIN = 0.1 VPK, f = 2400 MHz
Note 1: These parameters were characterized using the circuit in Figure 1-6. In Figures 2-40 and 2-41, there is an
IMD tone at DC, a residual tone at 1 kHz and other IMD tones and clock tones. IMD is Referred to
Input (RTI).
2: High gains behave differently; see Section 4.3.3 “Offset at Power-Up”.
3: tSTL and tODR include some uncertainty due to clock edge timing.
TABLE 1-3: TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +1.8V to +5.5V, VSS = GND
Parameters
Sym. Min. Typ. Max. Units
Conditions
Temperature Ranges
Specified Temperature Range
TA -40 — +125
°C
Operating Temperature Range
Storage Temperature Range
TA -40 — +125
TA -65 — +150
°C Note 1
°C
Thermal Package Resistances
Thermal Resistance, 5LD-SC70
JA — 209 —
°C/W
Thermal Resistance, 5LD-SOT-23
JA — 201 —
°C/W
Thermal Resistance, 8L-2x3 TDFN
JA — 53 — °C/W
Thermal Resistance, 8L-MSOP
JA — 211 —
°C/W
Thermal Resistance, 14L-TSSOP
JA — 100 —
°C/W
Note 1: Operation must not cause TJ to exceed the Maximum Junction Temperature specification (+150°C).
2014-2015 Microchip Technology Inc.
DS20005367B-page 5
5 Page MCP6V61/1U/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 20 kΩ to VL and CL = 30 pF.
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
-50
615 Samples
1 Wafer Lot
-25 0 25 50 75 100 125
Ambient Temperature (°C)
FIGURE 2-25:
Power-On Reset Voltage vs.
Ambient Temperature.
2014-2015 Microchip Technology Inc.
DS20005367B-page 11
11 Page |
Páginas | Total 30 Páginas | |
PDF Descargar | [ Datasheet MCP6V61.PDF ] |
Número de pieza | Descripción | Fabricantes |
MCP6V61 | 1 MHz Zero-Drift Op Amps | Microchip |
MCP6V61U | 1 MHz Zero-Drift Op Amps | Microchip |
MCP6V62 | 1 MHz Zero-Drift Op Amps | Microchip |
MCP6V64 | 1 MHz Zero-Drift Op Amps | Microchip |
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