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PDF MCP6V11U Data sheet ( Hoja de datos )
| Número de pieza | MCP6V11U | |
| Descripción | Zero-Drift Op Amps | |
| Fabricantes | Microchip | |
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MCP6V11/1U/2/4
7.5 µA, 80 kHz Zero-Drift Op Amps
Features:
• High DC Precision:
- VOS Drift: ±50 nV/°C (maximum)
- VOS: ±8 µV (maximum)
- AOL: 112 dB (minimum, VDD = 5.5V)
- PSRR: 118 dB (minimum, VDD = 5.5V)
- CMRR: 119 dB (minimum, VDD = 5.5V)
- Eni: 2.1 µVP-P (typical), f = 0.1 Hz to 10 Hz
- Eni: 0.67 µVP-P (typical), f = 0.01 Hz to 1 Hz
• Low Power and Supply Voltages:
- IQ: 7.5 µA/amplifier (typical)
- Wide Supply Voltage Range: 1.6V to 5.5V
• Small Packages:
- Singles in SC70, SOT-23
- Duals in MSOP-8, 2×3 TDFN
- Quads in TSSOP-14
• Easy to Use:
- Rail-to-Rail Input/Output
- Gain Bandwidth Product: 80 kHz (typical)
- Unity Gain Stable
• Extended Temperature Range: -40°C to +125°C
Typical Applications:
• Portable Instrumentation
• Sensor Conditioning
• Temperature Measurement
• DC Offset Correction
• Medical Instrumentation
Design Aids:
• SPICE Macro Models
• FilterLab® Software
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
• Application Notes
Related Parts:
• MCP6V01/2/3: Auto-Zeroed, Spread Clock
• MCP6V06/7/8: Auto-Zeroed
• MCP6V26/7/8: Auto-Zeroed, Low Noise
• MCP6V31/1U/2/4: Zero-Drift, Low Power
Description:
The Microchip Technology Inc. MCP6V11/1U/2/4 family
of operational amplifiers provides input offset voltage
correction for very low offset and offset drift. These are
low-power devices, with a gain bandwidth product of
80 kHz (typical). They are unity gain stable, have
virtually no 1/f noise, and have good Power Supply
Rejection Ratio (PSRR) and Common Mode Rejection
Ratio (CMRR). These products operate with a single
supply voltage as low as 1.6V, while drawing
7.5 µA/amplifier (typical) of quiescent current.
The Microchip Technology Inc. MCP6V11/1U/2/4 op
amps are offered in single (MCP6V11 and
MCP6V11U), dual (MCP6V12) and quad (MCP6V14)
packages. They were designed using an advanced
CMOS process.
Package Types
MCP6V11
SOT-23
MCP6V12
MSOP
VOUT 1
VSS 2
VIN+ 3
5 VDD VOUTA 1
VINA– 2
4 VIN– VINA+ 3
VSS 4
8 VDD
7 VOUTB
6 VINB–
5 VINB+
MCP6V11U
SC70, SOT-23
MCP6V12
2×3 TDFN*
VIN+ 1
VSS 2
VIN– 3
5 VDD VOUTA 1
8 VDD
VINA– 2
4 VOUT VINA+ 3
EP
9
7 VOUTB
6 VINB–
VSS 4
5 VINB+
MCP6V14
TSSOP
VOUTA 1
VINA– 2
VINA+ 3
VDD 4
VINB+ 5
VINB– 6
VOUTB 7
14 VOUTD
13 VIND–
12 VIND+
11 VSS
10 VINC+
9 VINC–
8 VOUTC
* Includes Exposed Thermal Pad (EP); see Table 3-1.
2012-2014 Microchip Technology Inc.
DS20005124B-page 1
1 page  
MCP6V11/1U/2/4
TABLE 1-2: AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.6V to +5.5V, VSS = GND,
VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 100 kΩ to VL and CL = 20 pF (refer to Figure 1-4 and Figure 1-5).
Parameters
Sym. Min. Typ. Max. Units
Conditions
Amplifier AC Response
Gain Bandwidth Product
GBWP — 80 — kHz
Slew Rate
SR — 0.03 — V/µs
Phase Margin
PM — 70 —
° G = +1
Amplifier Noise Response
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Amplifier Distortion (Note 1)
Eni — 0.67 — µVP-P f = 0.01 Hz to 1 Hz
Eni — 2.1 — µVP-P f = 0.1 Hz to 10 Hz
eni — 102 — nV/√Hz f < 500 Hz
ini — 4 — fA/√Hz
Intermodulation Distortion (AC)
Amplifier Step Response
IMD — 50 — µVPK VCM tone = 50 mVPK at 100 Hz, GN = 1
Start Up Time
tSTR — 2 — ms G = +1, 0.1% VOUT settling (Note 2)
Offset Correction Settling Time
tSTL — 300 —
µs G = +1, VIN step of 2V,
VOS within 100 µV of its final value
Output Overdrive Recovery Time tODR — 450 —
µs G = -10, ±0.5V input overdrive to VDD/2,
VIN 50% point to VOUT 90% point (Note 3)
Note 1: These parameters were characterized using the circuit in Figure 1-6. In Figure 2-37 and Figure 2-38,
there is an IMD tone at DC, a residual tone at1 kHz and other IMD tones and clock tones.
2: High gains behave differently; see Section 4.3.3, Offset at Power Up.
3: tODR includes some uncertainty due to clock edge timing.
TABLE 1-3: TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +1.6V to +5.5V,
VSS = GND.
Parameters
Sym. Min. Typ. Max. Units
Conditions
Temperature Ranges
Specified Temperature Range
TA -40 — +125
°C
Operating Temperature Range
TA -40 — +125
°C (Note 1)
Storage Temperature Range
TA -65 — +150
°C
Thermal Package Resistances
Thermal Resistance, 5L-SC-70
JA — 209 —
°C/W
Thermal Resistance, 5L-SOT-23
JA — 201 —
°C/W
Thermal Resistance, 8L-2×3 TDFN
θJA — 53 — °C/W
Thermal Resistance, 8L-MSOP
θJA — 211 —
°C/W
Thermal Resistance, 14L-TSSOP
θJA — 100 —
°C/W
Note 1: Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C).
2012-2014 Microchip Technology Inc.
DS20005124B-page 5
5 Page 
MCP6V11/1U/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.6V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 100 kΩ to VL and CL = 20 pF.
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125
Ambient Temperature (°C)
FIGURE 2-24:
Power-on Reset Voltage vs.
Ambient Temperature.
2012-2014 Microchip Technology Inc.
DS20005124B-page 11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MCP6V11U.PDF ] | |
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