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PDF MCP6V82 Data sheet ( Hoja de datos )

Número de pieza MCP6V82
Descripción Zero-Drift Op Amps
Fabricantes Microchip 
Logotipo Microchip Logotipo



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MCP6V81/1U/2/4
5 MHz, 0.5 mA, Zero-Drift Op Amps
Features
• High DC Precision:
- VOS Drift: ±20 nV/°C (maximum, VDD = 5.5V)
- VOS: ±9 µV (maximum)
- AOL: 126 dB (minimum, VDD = 5.5V)
- PSRR: 117 dB (minimum, VDD = 5.5V)
- CMRR: 118 dB (minimum, VDD = 5.5V)
- Eni: 0.28 µVP-P (typical), f = 0.1 Hz to 10 Hz
- Eni: 0.1 µVP-P (typical), f = 0.01 Hz to 1 Hz
• Enhanced EMI Protection:
- Electromagnetic Interference Rejection Ratio
(EMIRR) at 1.8 GHz: 101 dB
• Low Power and Supply Voltages:
- IQ: 0.5 mA/amplifier (typical)
- Wide supply voltage range: 2.2V to 5.5V
• Small Packages:
- Singles in SC70, SOT-23
- Duals in MSOP-8, 2x3 TDFN
- Quads in TSSOP-14
• Easy to Use:
- Rail-to-rail input/output
- Gain Bandwidth Product: 5 MHz (typical)
- Unity Gain Stable
• Extended Temperature Range: -40°C to +125°C
Typical Applications
• Portable Instrumentation
• Sensor Conditioning
• Temperature Measurement
• DC Offset Correction
• Medical Instrumentation
Design Aids
• SPICE Macro Models
• FilterLab® Software
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
• Application Notes
Related Parts
• MCP6V11/1U/2/4: Zero-Drift, Low Power
• MCP6V31/1U/2/4: Zero-Drift, Low Power
• MCP6V61/1U/2/4: Zero-Drift, 1 MHz
• MCP6V71/1U/2/4: Zero-Drift, 2 MHz
• MCP6V91/1U/2/4: Zero-Drift, 10 MHz
Description
The Microchip Technology Incorporated
MCP6V81/1U/2/4 family of operational amplifiers
provides input offset voltage correction for very low
offset and offset drift. These devices have a gain
bandwidth product of 5 MHz (typical). They are
unity-gain stable, have virtually no 1/f noise and have
good Power Supply Rejection Ratio (PSRR) and
Common Mode Rejection Ratio (CMRR). These
products operate with a single supply voltage as low as
2.2V, while drawing 500 µA/amplifier (typical) of
quiescent current.
The MCP6V81/1U/2/4 family has enhanced EMI
protection to minimize any electromagnetic
interference from external sources. This feature makes
it well suited for EMI-sensitive applications such as
power lines, radio stations and mobile
communications, etc.
The MCP6V81/1U/2/4 op amps are offered in single
(MCP6V81 and MCP6V81U), dual (MCP6V82) and
quad (MCP6V84) packages. They were designed
using an advanced CMOS process.
Package Types
MCP6V81
SOT-23
MCP6V81U
SC70, SOT-23
VOUT 1
VSS 2
VIN+ 3
5 VDD
4 VIN-
VIN+ 1
VSS 2
VIN– 3
5 VDD
4 VOUT
MCP6V82
MSOP
MCP6V82
2×3 TDFN *
VOUTA 1
VINA– 2
VINA+ 3
VSS 4
8 VDD VOUTA 1
8 VDD
7 VOUTB VINA- 2
6 VINB- VINA+ 3
EP
9
7 VOUTB
6 VINB-
5 VINB+ VSS 4
5 VINB+
MCP6V84
TSSOP
VOUTA 1
VINA- 2
VINA+ 3
VDD 4
VINB+ 5
VINB- 6
VOUTB 7
14 VOUTD
13 VIND-
12 VIND+
11 VSS
10 VINC+
9 VINC-
8 VOUTC
* Includes Exposed Thermal Pad (EP); see Table 3-1.
2016 Microchip Technology Inc.
DS20005419B-page 1

1 page




MCP6V82 pdf
MCP6V81/1U/2/4
TABLE 1-2: AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to +5.5V, VSS = GND,
VCM = VDD/3, VOUT = VDD/2, VL = VDD/2, RL = 10 kto VL and CL = 30 pF (refer to Figures 1-4 and 1-5).
Parameters
Sym. Min. Typ. Max. Units
Conditions
Amplifier AC Response
Gain Bandwidth Product
GBWP — 5 — MHz
Slew Rate
SR — 4 — V/µs
Phase Margin
PM — 60 — °C G = +1
Amplifier Noise Response
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Amplifier Distortion(1)
Eni — 0.1 — µVP-P f = 0.01 Hz to 1 Hz
Eni — 0.28 — µVP-P f = 0.1 Hz to 10 Hz
eni — 13 — nV/Hz f < 2 kHz
ini — 6 — fA/Hz
Intermodulation Distortion (AC)
IMD — 100 — µVPK VCM tone = 100 mVPK at 1 kHz,
GN = 11, RTI
Amplifier Step Response
Start-Up Time
Offset Correction Settling Time
tSTR
tSTL
Output Overdrive Recovery Time tODR
— 100 —
— 30 —
— 60 —
µs G = +1, 0.1% VOUT settling (Note 2)
µs G = +1, VIN step of 2V,
VOS within 100 µV of its final value
µs G = -10, ±0.5V input overdrive to VDD/2,
VIN 50% point to VOUT 90% point (Note 3)
EMI Protection
EMI Rejection Ratio
EMIRR — 90 —
dB VIN = 0.1 VPK, f = 400 MHz
— 100 —
VIN = 0.1 VPK, f = 900 MHz
— 101 —
VIN = 0.1 VPK, f = 1800 MHz
— 105 —
VIN = 0.1 VPK, f = 2400 MHz
Note 1: These parameters were characterized using the circuit in Figure 1-6. In Figures 2-40 and 2-41, there is an IMD
tone at DC, a residual tone at 1 kHz and other IMD tones and clock tones. IMD is Referred to Input (RTI).
2: High gains behave differently; see Section 4.3.3 “Offset at Power-Up”.
3: tSTL and tODR include some uncertainty due to clock edge timing.
TABLE 1-3: TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +2.2V to +5.5V, VSS = GND.
Parameters
Sym. Min. Typ. Max. Units
Conditions
Temperature Ranges
Specified Temperature Range
TA -40 — +125
°C
Operating Temperature Range
Storage Temperature Range
TA -40 — +125
TA -65 — +150
°C Note 1
°C
Thermal Package Resistances
Thermal Resistance, 5LD-SC70
JA — 209 —
°C/W
Thermal Resistance, 5LD-SOT-23
JA — 201 —
°C/W
Thermal Resistance, 8L-2x3 TDFN
JA — 53 — °C/W
Thermal Resistance, 8L-MSOP
JA — 211 —
°C/W
Thermal Resistance, 14L-TSSOP
JA — 100 —
°C/W
Note 1: Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C).
2016 Microchip Technology Inc.
DS20005419B-page 5

5 Page





MCP6V82 arduino
MCP6V81/1U/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.2V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 10 kto VL and CL = 30 pF.
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
-50
-25 0 25 50 75 100 125
Ambient Temperature (°C)
FIGURE 2-25:
Power-on Reset Voltage vs.
Ambient Temperature.
2016 Microchip Technology Inc.
DS20005419B-page 11

11 Page







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