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PDF SI7112DN Data sheet ( Hoja de datos )
| Número de pieza | SI7112DN | |
| Descripción | N-Channel 30 V (D-S) Fast Switching MOSFET | |
| Fabricantes | Vishay | |
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Si7112DN
Vishay Siliconix
N-Channel 30 V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0075 at VGS = 10 V
30
0.0082 at VGS = 4.5 V
ID (A)
17.8
17.0
PowerPAK 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7112DN-T1-E3 (Lead (Pb)-free)
Si7112DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Synchronous Rectification
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ± 12
Continuous Drain Current (TJ = 150 °C)a
TC = 25 °C
TC = 70 °C
ID
17.8
14.2
11.3
9.1
Pulsed Drain Current
IDM 60
Continuous Source Current (Diode Conduction)a
IS 3.2 1.3
Single Avalanche Current
Single Avalanche Energy
L = 0.1 mH
IAS
EAS
20
20
Maximum Power Dissipationa
TC = 25 °C
TC = 70 °C
PD
3.8
2.0
1.5
0.8
Operating Junction and Storage Temperature Range
TJ, Tstg
- 50 to 150
Soldering Recommendations (Peak Temperature)b, c
260
Unit
V
A
mJ
W
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions apply.
Document Number: 72864
www.vishay.com
S11-0855-Rev. G, 02-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
Si7112DN
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
2
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
0.2
0.1
0.1 Single Pulse
0.05
0.02
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72864.
Document Number: 72864
www.vishay.com
S11-0855-Rev. G, 02-May-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.016
(0.405)
0.039
(0.990)
0.152
(3.860)
0.068
(1.725)
0.010
(0.255)
0.026
(0.660)
Return to Index
Return to Index
0.025
(0.635)
0.030
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
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| PDF Descargar | [ Datasheet SI7112DN.PDF ] | |
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