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PDF MBRF2545CTG Data sheet ( Hoja de datos )

Número de pieza MBRF2545CTG
Descripción Switch-mode Schottky Power Rectifier
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MBRF2545CTG
Switch-mode
Schottky Power Rectifier
The Switch−mode Power Rectifier employs the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low−voltage, high−frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Features
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Matched Dual Die Construction
High Junction Temperature Capability
High dv/dt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Epoxy Meets UL 94 V−0 @ 0.125 in
Electrically Isolated
No Isolation Hardware Required
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
25 AMPERES, 45 VOLTS
1
2
3
MARKING
DIAGRAM
AYWW
TO−220 FULLPAK
B2545G
CASE 221AH
AKA
1
A = Assembly Location
Y = Year
WW = Work Week
B2545 = Device Code
G = Pb−Free Package
AKA = Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MBRF2545CTG TO−220
(Pb−Free)
50 Units/Rail
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 9
1
Publication Order Number:
MBRF2545CT/D

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