|
|
Numéro de référence | SJDP120R085 | ||
Description | Normally-On Trench Silicon Carbide Power JFET | ||
Fabricant | SemiSouth | ||
Logo | |||
1 Page
Silicon Carbide
SJDP120R085
Normally-On Trench Silicon Carbide Power JFET
Features:
- Positive Temperature Coefficient for Ease of Paralleling
- Extremely Fast Switching with No "Tail" Current at 150 °C
- RDS(on) typical of 0.075 Ω
- Voltage Controlled
- Low Gate Charge
- Low Intrinsic Capacitance
4
Product Summary
BVDS
RDS(ON)max
ETS,typ
1200
0.085
290
V
Ω
µJ
D(2,4)
G(1)
Applications:
- Solar Inverter
- SMPS
- Power Factor Correction
- Induction Heating
- UPS
- Motor Drive
TO-247
3
2
1
S(3)
Internal Schematic
MAXIMUM RATINGS
Parameter
Symbol
Conditions
Continuous Drain Current
Pulsed Drain Current (1)
Short Circuit Withstand Time
Power Dissipation
Gate-Source Voltage
ID, TC=25
ID, TC=100
IDM
tSC
PD
VGS
TC = 25 °C
TC = 100 °C
Tj = 25 °C
VDD < 800 V, Tj < 125 °C
TC = 25 °C
AC(2)
Operating and Storage Temperature
Tj, Tstg
Lead Temperature for Soldering
Tsold
(1) Pulse width limited by maximum junction temperature
(2) Rg(EXT) = 1 Ω, tp < 200 ns, see Figure 6 for static conditions
(3) See Figure 14 for gate driver and switching test circuit
1/8" from case < 10 s
Value
27
17
75
50
114
-15 to +15
-55 to +150
260
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, junction-to-case
Thermal Resistance, junction-to-ambient
SJDP120R085
Symbol
Rth,JC
Rth,JA
Rev 3.0
Value
Typ Max
- 1.1
- 50
Unit
A
A
µs
W
V
°C
°C
Unit
°C / W
1/7
|
|||
Pages | Pages 7 | ||
Télécharger | [ SJDP120R085 ] |
No | Description détaillée | Fabricant |
SJDP120R085 | Normally-On Trench Silicon Carbide Power JFET | SemiSouth |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |