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PDF SJEP120R063 Data sheet ( Hoja de datos )
| Número de pieza | SJEP120R063 | |
| Descripción | Normally-OFF Trench Silicon Carbide Power JFET | |
| Fabricantes | SemiSouth | |
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PRELIMINARY
Silicon Carbide
SJEP120R063
Normally-OFF Trench Silicon Carbide Power JFET
Features:
- Compatible with Standard Gate Driver ICs
- Positive Temperature Coefficient for Ease of Paralleling
- Temperature Independent Switching Behavior
- 150 °C Maximum Operating Temperature
- RDS(on)max of 0.063 Ω
- Voltage Controlled
- Low Gate Charge
4
- Low Intrinsic Capacitance
Product Summary
BVDS
1200
V
RDS(ON)max
0.063
Ω
ETS,typ
440
µJ
D(2,4)
G(1)
Applications:
- Solar Inverter
- SMPS
- Power Factor Correction
- Induction Heating
- UPS
- Motor Drive
TO-247
3
2
1
S(3)
Internal Schematic
MAXIMUM RATINGS
Parameter
Symbol
Conditions
Continuous Drain Current
ID, Tj=125
ID, Tj=150
Pulsed Drain Current (1)
IDM
Short Circuit Withstand Time
tSC
Power Dissipation
PD
Gate-Source Voltage
VGS
Operating and Storage Temperature
Tj, Tstg
Lead Temperature for Soldering
Tsold
(1) Limited by pulse width
(2) RgEXT = 0.5 Ω, tp < 200 ns, see Figure 6 for static conditions
Tj = 125 °C
Tj = 150 °C
Tj = 25 °C
VDD < 800 V, TC < 125 °C
TC = 25 °C
AC(2)
1/8" from case < 10 s
Value
30
20
60
50
250
-15 to +15
-55 to +150
260
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, junction-to-case
Thermal Resistance, junction-to-ambient
Symbol
Rth JC
Rth JA
Value
Typ Max
- 0.6
- 50
Unit
A
A
µs
W
V
°C
°C
Unit
°C / W
SJEP120R063 Rev1.5
1/8
January 2012
1 page  
PRELIMINARY
Silicon Carbide
SJEP120R063
Figure 13. Typical Drain-Source Leakage
ID = f(VDS); VGS = 0 V; parameter: Tj
1E-03
150oC
1E-04
1E-05
1E-06
100oC
1E-07
1E-08
25oC
1E-09
0
300 600 900 1200
BVDS, Drain-Source Blocking Voltage (V)
Figure 15. Switching Energy Losses
Es = f(RGEXT); VDS = 600 V; ID = 24 A, GD = +15 V/-15 V
1000
900
800
Tj = 25oC
Tj = 150oC
ETS
700
600
500 EOFF
400
300 EON
200
100
0
0 3 6 9 12
RgEXT, External Gate Resistance, (Ω)
Figure 14. Switching Energy Losses
Es = f(ID); VDS = 600 V; GD = +15 V/-15 V, RGEXT = 2.5 Ω
700
Tj = 25oC
600 Tj = 150oC
500
ETS
400
EOFF
300
EON
200
100
0
0 6 12 18 24 30 36
ID, Drain Current (A)
SJEP120R063 Rev1.5
5/8
January 2012
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SJEP120R063.PDF ] | |
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