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PDF APEHT-0103 Data sheet ( Hoja de datos )

Número de pieza APEHT-0103
Descripción High Temperature Silicon Carbide Schottky Diode
Fabricantes APEI　
Logotipo APEI Logotipo



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No Preview Available ! APEHT-0103 Hoja de datos, Descripción, Manual

PRELIMINARY
APE HT-0103
High Temperature Silicon Carbide Schottky Diode
FEATURES
High temperature: Tc(max) = 225 C
1200 V / 10 A / 64 nC
Tj(max) = 225 C
AS9100:Rev. C-certified manufacturing, traceable throughout value chain
Near zero forward and reverse recovery
Extremely fast switching
High system efficiency
Hermetic seal; flux free, void free packaging
Backside isolation
High reliability
APPLICATIONS
Downhole tools
High efficiency converters
Motor drives
Aerospace: Military & Commercial
Smart grid/grid-tie distributed generation
TO-254
Package
AK A
Absolute Maximum Ratings1 (at Tj = 25 C unless otherwise stated)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
Condition(s)
VDC DC blocking voltage
IF
IFRM
IFSM
IF(max)
Continuous forward current
Repetitive peak forward surge current
Non-repetitive peak forward surge current
Non-repetitive peak forward current
Ptot Power dissipation
Tj Operating junction temperature
Tstg Storage temperature
Visol Insulation test voltage
Tj < 160 C
Tj = 125 C, D = 0.1
Tc = 25 C, tP = 10 ms,
Rth(j-c) < 1.1 C/W
Tc = 25 C, tP = 10 µs,
Rth(j-c) < 1.1 C/W
Tj = 25 C
Tj = 100 C
Tj = 225 C
AC, 1 min.
1 Obtained from SemiSouth Laboratories, Inc. SDC10S120 Rev. 1.1 (August 2008) datasheet
2 Data verified through APEI experimentation and/or calculation
05/12/14 Rev. 1.1
AN ISO 9001:2008 & AS9100:REV. C - CERTIFIED MANUFACTURING COMPANY
Value
1200
1200
10
46
45
250
TBD2
TBD
TBD
-50 to 205
-50 to 225
TBD
Units
V
A
W
C
C
V
1

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