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Datasheet RQ1C075UNFRA-PDF.HTML Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
RQ1 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RQ1A060ZP | Pch -12V -6A Middle Power MOSFET RQ1A060ZP
Pch -12V -6A Middle Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
-12V 23mΩ ±6A 1.5W
lFeatures
1) Low on - resistance. 2) -1.5V Drive 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8). 5) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
� ROHM Semiconductor mosfet | | |
2 | RQ1A070ZP | Pch -12V -7A Middle Power MOSFET RQ1A070ZP
Pch -12V -7A Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-12V 12mΩ ±7A 1.5W
lFeatures
1) Low on - resistance. 2) Low voltage drive(1.5V). 3) High power package.
lOutline
TSMT8
lInner circuit
Datasheet
ROHM Semiconductor mosfet | | |
3 | RQ1A070ZPFRA | MOSFET, Transistor RQ1A070ZPFRA
Pch -12V -7A Small Signal MOSFET
VDSS RDS(on)(Max.)
ID PD
-12V 12mΩ ±7A 1.5W
lFeatures
1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) AEC-Q101 Qualified
lOutline
TSMT8
lInner circuit
Datasheet
lPackaging specificati ROHM Semiconductor mosfet | | |
4 | RQ1C065UN | Nch 20V 6.5A Middle Power MOSFET RQ1C065UN
Nch 20V 6.5A Middle Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
20V 22mΩ ±6.5A 1.5W
lFeatures
1) Low on - resistance. 2) 1.5V Drive 3) Built-in G-S protection diode. 4) Small surface mount package(TSMT8). 5) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
� ROHM Semiconductor mosfet | | |
5 | RQ1C075UN | 1.5V Drive Nch MOSFET
1.5V Drive Nch MOSFET
RQ1C075UN
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive).
(1) (2)
(3) (4)
Abbreviated symbol : XH
Application ROHM Semiconductor mosfet | | |
6 | RQ1C075UNFRA | MOSFET, Transistor FRA
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)5 %!
6) AEC-Q101 Qualified
#
ROHM Semiconductor mosfet | | |
7 | RQ1E050RP | Pch -30V -5A Middle Power MOSFET RQ1E050RP
Pch -30V -5A Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-30V 31mΩ ±5A 1.5W
lFeatures
1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSMT8). 4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
lInner circuit
ROHM Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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