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PDF RSD080P05FRA Data sheet ( Hoja de datos )
| Número de pieza | RSD080P05FRA | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
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4V Drive Pch MOSFET
RRSSDD008800PP0055FRA
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
Application
Switching
Data Sheet
AEC-Q101 Qualified
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RRSSDD008800PP050F5RA
Taping
TL
2500
○
Inner circuit
∗1
∗2
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
45
20
8.0
16
8.0
16
15
150
55 to 150
*1 Pw≦10s, Duty cycle≦1%
*2 Tc=25C
Unit
V
V
A
A
A
A
W
C
C
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance
Parameter
Channel to Case
* Tc=25C
Symbol
Rth (ch-c) *
Limits
8.33
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
1 page  
RSD080P05FRA
Data Sheet
100000
10000
Fig.13 Typical Capacitance vs. Drain-Source Voltage
Ta=25°C
f=1MHz
VGS=0V
1000
100
Ciss
Coss
Crss
10
1
0.01
0.1 1 10
Drain-Source Voltage : -VDS [V]
100
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Tc=25°C
Single Pulse
1
Fig.14 Maximum Safe Operating Area
100
Operation in this area
is limited by RDS(on)
(VGS = -10V )
10
PW = 100μs
1
0.1
Tc=25°C
Single Pulse
0.01
0.1
1
10
Drain-Source Voltage : -VDS [ V ]
PW = 1ms
PW = 10ms
DC Operation
100
0.1
0.01
0.0001 0.001
Rth(ch-c)=8.33°C/W
Rth(ch-c)(t)=r(t)×Rth(ch-c)
0.01 0.1 1 10 100 1000
Pulse width : Pw (s)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.08 - Rev.A
5 Page | ||
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| PDF Descargar | [ Datasheet RSD080P05FRA.PDF ] | |
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