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RSD160P05 fiches techniques PDF

ROHM Semiconductor - MOSFET ( Transistor )

Numéro de référence RSD160P05
Description MOSFET ( Transistor )
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RSD160P05 fiche technique
Data Sheet
4V Drive Pch MOSFET
RSD160P05
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
Application
Switching
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSD160P05
Taping
TL
2500
Inner circuit
1
2
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
*1 Pw10s, Duty cycle1%
*2 Tc=25C
Limits
45
20
16
32
16
32
20
150
55 to 150
Unit
V
V
A
A
A
A
W
C
C
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance
Parameter
Channel to Case
* Tc=25C
Symbol
Rth (ch-c) *
Limits
6.25
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A

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