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RSD200N05FRA fiches techniques PDF

ROHM Semiconductor - MOSFET ( Transistor )

Numéro de référence RSD200N05FRA
Description MOSFET ( Transistor )
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RSD200N05FRA fiche technique
4V Drive Nch MOSFET
RSD200N05FRA
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
zApplication
Switching
Data Sheet
AEC-Q101 Qualified
z Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
zPackaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSD200N05FRA
Taping
TL
2500
{
z Absolute maximum ratings (Ta = 25qC)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
45
r20
r20
r40
16
40
20
150
55 to 150
*1 Pw10Ps, Duty cycle1%
*2 Tc=25qC
Unit
V
V
A
A
A
A
W
qC
qC
z Inner circuit
1
2
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
zThermal resistance
Parameter
Channel to Case
* Tc=25qC
Symbol
Rth (ch-c)*
Limits
6.25
Unit
qC / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
20116.068 - Rev.A

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