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PDF RSD201N10FRA Data sheet ( Hoja de datos )

Número de pieza RSD201N10FRA
Descripción MOSFET ( Transistor )
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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RSD201N10FRA
Nch 100V 20A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
100V
46m
20A
20W
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
Application
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
Absolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Tc = 25°C
Ta = 25°C
Junction temperature
Range of storage temperature
Outline
AEC-Q101 Qualified
CPT3
(SC-63)
<SOT-428>
(3)
(2)
(1)
Inner circuit
(1) Gate
(2) Drain
(3) Source
(1)
1 ESD PROTECTION DIODE
2 BODY DIODE
Packaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
(3)
1
2
(2)
Taping
330
16
2,500
TL
201N10
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
IAR *3
PD
PD
Tj
Tstg
Value
100
20
10
80
20
14.6
10
20
0.85
150
55 to 150
Unit
V
A
A
A
V
mJ
A
W
W
°C
°C
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/12
2015.11 - Rev.B

1 page




RSD201N10FRA pdf
RSD201N10FRA
Electrical characteristic curves
Data Sheet
Fig.4 Avalanche Current vs Inductive Load
100
VDD=50V,RG=25
VGF=10V,VGR=0V
Starting Tch=25ºC
10
1
0.1
0.01
0.1 1
10 100
Coil Inductance : L [mH]
Fig.5 Avalanche Energy Derating Curve
vs Junction Temperature
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Junction Temperature : Tj [°C]
Fig.6 Typical Output Characteristics(I)
20
Ta=25ºC
Pulsed
15 VGS=10.0V
VGS=4.0V
10 VGS=3.0V
VGS=2.5V
VGS=2.3V
5 VGS=2.2V
VGS=2.0V
0
0 0.2 0.4 0.6 0.8 1
Drain - Source Voltage : VDS [V]
Fig.7 Typical Output Characteristics(II)
20
VGS=10.0V VGS=2.5V
VGS=4.0V
15 VGS=2.4V
Ta=25ºC
10
Pulsed
VGS=2.3V
VGS=2.2V
5
VGS=2.0V
0
0 2 4 6 8 10
Drain - Source Voltage : VDS [V]
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/12
2015.11 - Rev.B

5 Page





RSD201N10FRA arduino
RSD201N10FRA
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.2-1 Gate Charge Measurement Circuit
VGS
IG(Const.)
ID
D.U.T.
VDS
RL
VDD
Fig.3-1 Avalanche Measurement Circuit
VGS
RG
IAS
D.U.T.
VDS
L
VDD
Data Sheet
Fig.1-2 Switching Waveforms
Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.2-2 Gate Charge Waveform
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.3-2 Avalanche Waveform
V(BR)DSS
IAS
VDD
EAS =
1
2
L IAS2
V(BR)DSS
V(BR)DSS - VDD
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
11/12
2015.11 - Rev.B

11 Page







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