DataSheetWiki


RSD201N10 fiches techniques PDF

ROHM Semiconductor - MOSFET ( Transistor )

Numéro de référence RSD201N10
Description MOSFET ( Transistor )
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





1 Page

No Preview Available !





RSD201N10 fiche technique
RSD201N10
Nch 100V 20A Power MOSFET
RSD201N10
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
100V
46mW
20A
20W
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Tc = 25°C
Tc = 100°C
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Tc = 25°C
Ta = 25°C *4
Junction temperature
Range of storage temperature
lOutline
CPT3
(SC-63)
<SOT-428>
(3)
(2)
(1)
lInner circuit
(1) Gate
(2) Drain
(3) Source
(1)
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
(3)
*1
*2
(2)
Taping
330
16
2,500
TL
201N10
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
IAR *3
PD
PD
Tj
Tstg
Value
100
20
10
80
20
14.6
10
20
0.85
150
-55 to +150
Unit
V
A
A
A
V
mJ
A
W
W
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/12
2012.08 - Rev.A

PagesPages 13
Télécharger [ RSD201N10 ]


Fiche technique recommandé

No Description détaillée Fabricant
RSD201N10 MOSFET ( Transistor ) ROHM Semiconductor
ROHM Semiconductor
RSD201N10FRA MOSFET ( Transistor ) ROHM Semiconductor
ROHM Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche