|
|
Numéro de référence | RSD201N10 | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
RSD201N10
Nch 100V 20A Power MOSFET
RSD201N10
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
100V
46mW
20A
20W
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Tc = 25°C
Tc = 100°C
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Tc = 25°C
Ta = 25°C *4
Junction temperature
Range of storage temperature
lOutline
CPT3
(SC-63)
<SOT-428>
(3)
(2)
(1)
lInner circuit
(1) Gate
(2) Drain
(3) Source
(1)
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
(3)
*1
*2
(2)
Taping
330
16
2,500
TL
201N10
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
IAR *3
PD
PD
Tj
Tstg
Value
100
20
10
80
20
14.6
10
20
0.85
150
-55 to +150
Unit
V
A
A
A
V
mJ
A
W
W
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/12
2012.08 - Rev.A
|
|||
Pages | Pages 13 | ||
Télécharger | [ RSD201N10 ] |
No | Description détaillée | Fabricant |
RSD201N10 | MOSFET ( Transistor ) | ROHM Semiconductor |
RSD201N10FRA | MOSFET ( Transistor ) | ROHM Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |