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RSF015N06 fiches techniques PDF

ROHM Semiconductor - MOSFET ( Transistor )

Numéro de référence RSF015N06
Description MOSFET ( Transistor )
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RSF015N06 fiche technique
Data Sheet
4V Drive Nch MOSFET
RSF015N06
Structure
Silicon N-channel MOSFET
Features
1) Built-in G-S Protection Diode.
2) Small Surface Mount Package (TUMT3).
3) Low voltage drive. (4V)
Application
Switching
Dimensions (Unit : mm)
TUMT3
Abbreviated symbol : PX
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSF015N06
Taping
TL
3000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
60
VGSS *1
20
ID *1
1.5
IDP *1
IS
6.0
0.6
ISP *1
6.0
PD *2
0.8
Tch 150
Tstg 55 to +150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(3)
(1) Gate
(2) Source
(3) Drain
1
2
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
156
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.10 - Rev.A

PagesPages 7
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