|
|
Numéro de référence | RSF015N06 | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Data Sheet
4V Drive Nch MOSFET
RSF015N06
Structure
Silicon N-channel MOSFET
Features
1) Built-in G-S Protection Diode.
2) Small Surface Mount Package (TUMT3).
3) Low voltage drive. (4V)
Application
Switching
Dimensions (Unit : mm)
TUMT3
Abbreviated symbol : PX
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSF015N06
Taping
TL
3000
○
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
60
VGSS *1
20
ID *1
1.5
IDP *1
IS
6.0
0.6
ISP *1
6.0
PD *2
0.8
Tch 150
Tstg 55 to +150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(3)
(1) Gate
(2) Source
(3) Drain
∗1
∗2
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
156
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.10 - Rev.A
|
|||
Pages | Pages 7 | ||
Télécharger | [ RSF015N06 ] |
No | Description détaillée | Fabricant |
RSF015N06 | MOSFET ( Transistor ) | ROHM Semiconductor |
RSF015N06FRA | MOSFET ( Transistor ) | ROHM Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |