|
|
Numéro de référence | RSJ250P10FRA | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
4V Drive Pch MOSFET
RSJ250P10FRA
z Structure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
z Application
Switching
Data Sheet
AEC-Q101 Qualified
z Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
1.24
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
z Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSJ250P10 FRA
Taping
TL
1000
ۑ
z Inner circuit
∗1
∗2
z Absolute maximum ratings (Ta = 25qC)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP
IS
ISP
PD
Tch
*1
*2
*1
*2
*3
100
r20
r25
r50
25
50
50
150
Range of storage temperature
Tstg 55 to 150
*1 Limited only by maximum temperature allowed.
*2 PWᱨ10Ps, Duty cycleᱨ1%
*3 TC=25°C
Unit
V
V
A
A
A
A
W
qC
qC
z Thermal resistance
Parameter
Channel to Ambient
* TC=25°C
Symbol
Limits
Rth (ch-c)* 2.5
Unit
qC / W
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
ᰛ1 ESD PROTECTION DIODE
ᰛ2 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
202101.60.606- -RReevv.A.A
|
|||
Pages | Pages 9 | ||
Télécharger | [ RSJ250P10FRA ] |
No | Description détaillée | Fabricant |
RSJ250P10FRA | MOSFET ( Transistor ) | ROHM Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |