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PDF RSJ450N04 Data sheet ( Hoja de datos )
| Número de pieza | RSJ450N04 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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10V Drive Nch MOSFET
RSJ450N04
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High current
3) High power Package
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSJ450N04
Taping
TL
1000
○
Data Sheet
Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
1.24
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
Inner circuit
∗1
∗2
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
40
20
45
90
40
90
50
150
Range of storage temperature
Tstg 55to150
*1 Pw10s, Duty cycle1%
*2 Tc=25C
Unit
V
V
A
A
A
A
W
C
C
(1) Gate
(2) Drain
(3) Source
Thermal resistance
Parameter
Channel to Case
* Tc=25C
Symbol
Rth (ch-c) *
Limits
2.5
Unit
C / W
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.09 - Rev.A
1 page  
RSJ450N04
Measurement circuits
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.1-1 Switching Time Measurement Circuit
VGS
IG(Const.)
ID
RL
VDS
D.U.T.
VDD
Fig.2-1 Gate Charge Measurement Circuit
Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/5
2011.09 - Rev.A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RSJ450N04.PDF ] | |
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