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PDF RSJ650N10FRA Data sheet ( Hoja de datos )
| Número de pieza | RSJ650N10FRA | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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4V Drive Nch MOSFET
RSJ650N10 FRA
z Structure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) 4V drive.
Data Sheet
AEC-Q101 Qualified
z Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
1.24
2.54 0.78
5.08
(1) (2) (3)
0.4
2.7
z Application
Switching
z Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSJ650N10 FRA
Taping
TL
1000
{
z Absolute maximum ratings (Ta = 25qC)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
PD *2
Tch
Tstg
100
r20
r65
r130
65
130
100
150
55 to 150
*1 PWd10Ps, Duty cycled1%
*2 TC=25°C
*3 Please use within the range of SOA.
Unit
V
V
A
A
A
A
W
qC
qC
z Inner circuit
∗1
∗2
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
ᰛ1 ESD PROTECTION DIODE
ᰛ2 BODY DIODE
z Thermal resistance
Parameter
Channel to Case
* TC=25°C
Symbol Limits
Rth (ch-c)* 1.25
Unit
qC / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
20116.06 - Rev.A
1 page  
RSJ650N10 FRA
䚷
Data Sheet
Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Ta=25rC
Single Pulse
1
0.1
0.01
0.001
0.0001
0.00001
0.0001 0.001
Mounted on epoxy board.
(25mm 㽢 27mm 㽢 0.8mm)
Rth(ch-a)=70.2rC/W
Rth(ch-a)(t)=r(t)㽢Rth(ch-a)
0.01 0.1 1 10 100 1000
Pulse width : Pw (s)
1000
100
Fig.14 Maximum Safe Operating Area
Operation in this area is limited by RDS(on)
(VGS = 10V)
10
PW = 300us
1
0.1 Ta=25rC
Single Pulse
Mounted on epoxy board.
(25mm 㽢 27mm 㽢 0.8mm)
0.01
0.1 1 10
PW = 1ms
PW = 10ms
PW = 1s
100 1000
Drain-Source㻌 Voltage : VDS [ V ]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
20161.06 - Rev.A
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RSJ650N10FRA.PDF ] | |
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