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PDF RSD131P10FRA Data sheet ( Hoja de datos )

Número de pieza RSD131P10FRA
Descripción MOSFET ( Transistor )
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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RSD131P10FRA
Pch 100V 13A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
100V
200m:
13A
20W
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
zApplication
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
zAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Tc = 25°C
Tc = 100°C
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Tc = 25°C
Ta = 25°C
Junction temperature
Range of storage temperature
zOutline
AEC-Q101 Qualified
CPT3
(SC-63)
<SOT-428>
(1) (2)
(3)
zInner circuit
1
2
(1) Gate
(2) Drain
(3) Source
1 ESD PROTECTION DIODE
(1) (2) (3) 2 BODY DIODE
zPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
330
16
2,500
TL
131P10
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
IAR *3
PD
PD
Tj
Tstg
Value
100
r13
r7.0
r52
r20
11.9
13
20
0.85
150
55 to 150
Unit
V
A
A
A
V
mJ
A
W
W
°C
°C
www.rohm.com
© 201 ROHM Co., Ltd. All rights reserved.
1/12
2021051.51.111- -RReevv.C.E

1 page




RSD131P10FRA pdf
RSD131P10FRA
zElectrical characteristic curves
Data Sheet
Fig.4 Avalanche Current vs Inductive Load
100
VDD= 50V,RG=25:
VGF= 10V,VGR=0V
Starting Tch=25ºC
10
1
0.1
0.01
0.1 1 10 100
Coil Inductance : L [mH]
Fig.5 Avalanche Energy Derating Curve
vs Junction Temperature
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Junction Temperature : Tj [rC]
Fig.6 Typical Output Characteristics(I)
14
Ta=25ºC
12 Pulsed
10 VGS=10.0V
VGS=4.0V
8 VGS=3.5V
6
4
VGS=3.0V
2 VGS=2.5V
0
0 0.2 0.4 0.6 0.8 1
Drain - Source Voltage : -VDS [V]
Fig.7 Typical Output Characteristics(II)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
VGS=10.0V
VGS=4.0V
Ta=25ºC
Pulsed
VGS=3.0V
VGS=2.5V
VGS=2.4V
2 4 6 8 10
Drain - Source Voltage : -VDS [V]
www.rohm.com
© 201 ROHM Co., Ltd. All rights reserved.
5/12
2021051.51.111- -RReevv.C.E

5 Page





RSD131P10FRA arduino
RSD131P10FRA
zMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Data Sheet
Fig.1-2Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
VGS
RG
IAS
D.U.T.
VDS
L
VDD
Fig.3-2 Avalanche Waveform
V(BR)DSS
IAS
VDD
EAS =
1
2
L IAS2
V(BR)DSS
V(BR)DSS - VDD
www.rohm.com
© 201 ROHM Co., Ltd. All rights reserved.
11/12
2021051.51.111- -RReevv.C.E

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