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PDF RSD175N10FRA Data sheet ( Hoja de datos )
| Número de pieza | RSD175N10FRA | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ROHM Semiconductor | |
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4V Drive Nch MOSFET
RRSSDD117755NN1100FRA
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
4) 4V drive.
4) High power package.
Application
Switching
Data Sheet
AEC-Q101 Qualified
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
0.75
0.9 2.3
(1) (2)
0.65
(3) 2.3
0.5
1.0
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RRSSDD117755NN101F0RA
Taping
TL
2500
Inner circuit
∗1
∗2
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
PD *2
Tch
Range of storage temperature
Tstg
Limits
100
20
17.5
35
17.5
35
20
150
55 to 150
*1 PW10s, Duty cycle1%
*2 TC=25°C
*3 Please use within the range of SOA.
Unit
V
V
A
A
A
A
W
C
C
Thermal resistance
Parameter
Channel to Case
* TC=25°C
Symbol
Rth (ch-c)*
Limits
6.25
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.06 - Rev.A
1 page  
RSD175N10)5$
10000
1000
Fig.13 Typical Capacitance vs. Drain-Source Voltage
Ta=25°C
f=1MHz
VGS=0V
Ciss
100
Coss
10
0.01
Crss
0.1 1 10 100
Drain-Source Voltage : VDS [V]
1000
Fig.15 Maximum Safe Operating Area
100 Operation in this area is limited
by RDS(on) (VGS = 10V)
10
PW = 100μs
1
PW = 1ms
PW = 10ms
0.1 DC Operation
Tc=25°C
Single Pulse
0.01
0.1 1
10 100
Drain-Source Voltage : VDS [ V ]
1000
Data Sheet
Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Ta=25°C
Single Pulse
1
0.1
0.01
0.001
0.0001
0.0001 0.001
Mounted on a recommended land.
(20mm × 20mm × 0.8mm)
Rth(ch-a)=103.5°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.01 0.1
1
10
Pulse width : Pw (s)
100 1000
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© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.06 - Rev.A
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