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UT6MA2 fiches techniques PDF

ROHM Semiconductor - MOSFET ( Transistor )

Numéro de référence UT6MA2
Description MOSFET ( Transistor )
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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UT6MA2 fiche technique
UT6MA2
  30V Nch+Pch Middle Power MOSFET
Symbol
VDSS
RDS(on)(Max.)
ID
PD
Tr1:Nch Tr2:Pch
30V -30V
46mΩ 70mΩ
±4.0A ±4.0A
2.0W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package.
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
DFN2020-8D
HUML2020L8
 
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
180
Switching
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TCR
Marking
MA2
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Tr1:Nch Tr2:Pch
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
VDSS
ID
IDP*1
VGSS
IAS*2
EAS*2
30 -30
±4.0 ±4.0
±12 ±12
±20 ±20
3.0 -3.0
6.4 6.5
V
A
A
V
A
mJ
Power dissipation
total
element
PD*3
2.0
W
1.4
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/19
20160208 - Rev.001    

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