|
|
PDF P5806NPG Data sheet ( Hoja de datos )
| Número de pieza | P5806NPG | |
| Descripción | N- & P-Channel Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de P5806NPG (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
NIKO-SEM
N- & P-Channel Enhancement Mode
P5806NPG
Field Effect Transistor
DIP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 60 58mΩ
P-Channel -60 90mΩ
ID
4.5A
-3.5A
D1 D1 D2 D2
#1S1 G1 S2 G2
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Power Dissipation
Junction & Storage Temperature Range
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
PD
Tj, Tstg
N-Channel P-Channel UNITS
60 -60 V
±20 ±20 V
4.5 -3.5
4 -3 A
20 -20
2
W
1.28
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
Junction-to-Case
RθJC
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
62.5
40
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
N-Ch 60
P-Ch -60
N-Ch 1.0 1.5 2.5
P-Ch -1.0 -1.5 -2.5
V
VDS = 0V, VGS = ±20V
N-Ch
IGSS
VDS = 0V, VGS = ±20V
P-Ch
±100
nA
±100
VDS = 48V, VGS = 0V
N-Ch
1
VDS = -48V, VGS = 0V
P-Ch
IDSS VDS = 40V, VGS = 0V, TJ = 55 °C N-Ch
-1
10 µA
VDS = -40V, VGS = 0V, TJ = 55 °C P-Ch
-10
REV 1.0
Sep-02-2010
1
1 page  
NIKO-SEM
N- & P-Channel Enhancement Mode
P5806NPG
Field Effect Transistor
DIP-8
Halogen-Free & Lead-Free
Safe Operating Area
100
Operation in This Area
is Lim ite d by RDS(ON)
10
↓
1
0.1
0.01
0.1
NOTE :
1.VGS= 10V
2.TA=25˚ C
3.RθJA =62.5˚ C/W
4.Single Pulse
1 10
VDS , Drain-To-Source Voltage(V)
100us
1m s
10m s
100m s
1s
10s
DC
100
Single Pulse Maximum Power Disspation
1000
900
800
700
SINGLE PULSE
RθJA= 62.5˚ C/W
TA=25˚ C
600
500
400
300
200
100
0
0.0001
0.001
0.01
0.1
Single Pulse Time(s)
1
REV 1.0
Sep-02-2010
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet P5806NPG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| P5806NPG | N- & P-Channel Field Effect Transistor | NIKO-SEM |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |