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Numéro de référence | P0703EK | ||
Description | P-Channel Field Effect Transistor | ||
Fabricant | NIKO-SEM | ||
Logo | |||
NIKO-SEM
P-Channel Logic Level Enhancement
P0703EK
Mode Field Effect Transistor
NPAK SOP-8
(Preliminary)
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
7.5mΩ
ID
- 30A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C (Package Limited)
TC = 25 °C (Silicon Limited)
TC = 100 °C
Continuous Drain Current
Avalanche Current
TA = 25 °C
TA = 70 °C
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
Junction-to-Case
RθJC
1Pulse width limited by maximum junction temperature.
TYPICAL
D DDD
#1 S S S G
1. GATE
2. DRAIN
3. SOURCE
LIMITS
30
±25
-30
-72
-45
-120
-14
-11
-70
249
62.5
25
2.5
1.6
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
MAXIMUM
50
2
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS
VGS(th)
STATIC
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
REV 0.9
1
LIMITS
UNIT
MIN TYP MAX
-30
-1 -1.7
-3
V
Mar-02-2010
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Pages | Pages 5 | ||
Télécharger | [ P0703EK ] |
No | Description détaillée | Fabricant |
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