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Datasheet IXXH150N60C3-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
IXX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IXXA30N65C3HV | 650V IGBTs Preliminary Technical Information
XPTTM 650V IGBT GenX3TM
IXXA30N65C3HV
Extreme Light Punch Through IGBT for 20-60 kHz Switching
VCES = IC110 = V ≤CE(sat) tfi(typ) =
650V 30A
2.2V 32ns
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 ICM
IA EAS
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
Weight
T  IXYS igbt | | |
| 2 | IXXA50N60B3 | 600V IGBTs XPTTM 600V IGBTs GenX3TM
Extreme Light Punch Through IGBT for 5-30 kHz Switching
IXXA50N60B3 IXXP50N60B3 IXXH50N60B3
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 ICM
IA EAS
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
FC Md Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C TJ = 25°C to IXYS igbt | | |
| 3 | IXXH100N60B3 | IGBT, Insulated Gate Bipolar Transistor XPTTM 600V IGBT GenX3TM
IXXH100N60B3
Extreme Light Punch Through IGBT for 10-30 kHz Switching
VCES = IC110 = V ≤CE(sat) tfi(typ) =
600V 100A
1.80V 150ns
Symbol
VCES VCGR VGES VGEM
IC25 ILRMS IC110 ICM
IA EAS
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25° IXYS igbt | | |
| 4 | IXXH100N60C3 | IGBT, Insulated Gate Bipolar Transistor Advance Technical Information
XPTTM 600V GenX3TM
Extreme Light Punch Through IGBT for 20-60kHz Switching
IXXH100N60C3
VCES = IC110 = V ≤CE(sat) tfi(typ) =
600V 100A
2.20V 75ns
Symbol
VCES VCGR VGES VGEM
IC25 ILRMS IC110 ICM
IA EAS
SSOA
(RBSOA)
tsc (SCSOA)
PC TJ TJM Tstg TL TSOLD Md Weight
Te IXYS igbt | | |
| 5 | IXXH110N65C4 | IGBT, Insulated Gate Bipolar Transistor XPTTM 650V IGBT GenX4TM
Extreme Light Punch Through IGBT for 20-60 kHz Switching
IXXH110N65C4
VCES = 650V IC110 = 110A VCE(sat) 2.35V tfi(typ) = 30ns
Symbol
VCES VCGR
VGES VGEM
IC25 ILRMS IC110 ICM
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C IXYS igbt | | |
| 6 | IXXH150N60C3 | IGBT, Insulated Gate Bipolar Transistor Advance Technical Information
600V XPTTM IGBT GenX3TM
Extreme Light Punch through IGBT for 20-60kHz Switching
IXXH150N60C3
VCES = 600V IC110 = 150A VCE(sat) 2.5V tfi(typ) = 75ns
Symbol
VCES VCGR VGES VGEM
IICLR25MS IC110 ICM
IA EAS
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
Md IXYS igbt | | |
| 7 | IXXH30N60C3 | 600V IGBTs XPTTM 600V IGBT GenX3TM
IXXH30N60C3
Extreme Light Punch Through IGBT for 20-60 kHz Switching
Symbol
VCES VCGR
VGES VGEM
IC25 IC110 ICM
IA EAS
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC IXYS igbt | |
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