|
|
Numéro de référence | P2003ND5G | ||
Description | N- & P-Channel Field Effect Transistor | ||
Fabricant | NIKO-SEM | ||
Logo | |||
1 Page
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2003ND5G
TO-252-5
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 30 20mΩ
P-Channel -30 36mΩ
ID
25A
-19A
D1
G1
S1
D2
G2
S2
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current2
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
TC = 25 °C
Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
TL
N-Channel P-Channel UNITS
30 -30 V
±20 ±20 V
25 -19
20 -15
9 -7
A
7 -5.7
65 -45
19 -18
18 17 mJ
21
13
W
3
2
-55 to 150
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
1 Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
STATIC
VGS = 0V, ID = 250μA
VGS = 0V, ID = -250μA
MAXIMUM
6
42
UNITS
°C / W
°C / W
LIMITS
UNIT
MIN TYP MAX
N-Ch 30
P-Ch -30
V
REV 1.0
May-21-2009
1
|
|||
Pages | Pages 8 | ||
Télécharger | [ P2003ND5G ] |
No | Description détaillée | Fabricant |
P2003ND5G | N- & P-Channel Field Effect Transistor | NIKO-SEM |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |