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PDF PA503EMG Data sheet ( Hoja de datos )
| Número de pieza | PA503EMG | |
| Descripción | P-Channel Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
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NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor(Preliminary)
PA503EMG
SOT-23
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30 150m
ID
-2A
D
G
S
1 :GATE
2 :DRAIN
3 :SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
LIMITS
-30
±20
-2
-1.4
-10
1.25
0.8
-55 to 150
MAXIMUM
UNITS
V
V
A
W
°C
UNITS
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
166 °C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
STATIC
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 125 °C
VDS = -5V, VGS = -10V
VGS = -10V, ID =-2A
VGS = -4.5V, ID = -1A
VDS = -5V, ID = -2A
LIMITS
UNIT
MIN TYP MAX
-30
-1.0 -1.5 -2.5
V
±100 nA
-1
µA
-10
-5 A
100 150
m
180 250
16 S
Mar-25-2005
1
1 page  
NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor(Preliminary)
PA503EMG
SOT-23
Lead-Free
SOT-23 (M3) MECHANICAL DATA
Dimension
Min.
mm
Dimension
Typ. Max.
Min.
mm
Typ. Max.
A 0.85
1.15
H
0.1
0.15
0.25
B 2.4
3 I 0.37
C 1.4 1.6 1.8
J
D 2.7 2.9 3.1 K
E 1 1.1 1.3 L
F0
0.1 M
G 0.35
0.5 N
2
C
1
3
A
B
D
G
E
F
H
I
Mar-25-2005
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet PA503EMG.PDF ] | |
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