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PDF 2SD1616A Data sheet ( Hoja de datos )
| Número de pieza | 2SD1616A | |
| Descripción | NPN Silicon Transistor | |
| Fabricantes | NEC | |
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DATA SHEET
SILICON TRANSISTORS
2SD1616, 2SD1616A
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES
• Low VCE(sat):
VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA)
• Large PT in small dimension with versatility
PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A
• Complementary transistor with the 2SB1116 and 1116A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(Pulse)*
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings
2SD1616 2SD1616A
60 120
50 60
6.0
1.0
2.0
0.75
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO VCB = 60 V, IE = 0
Emitter cutoff current
IEBO VEB = 6.0 V, IC = 0
DC current gain
hFE1** VCE = 2.0 V, IC = 100 mA
DC current gain
hFE2** VCE = 2.0 V, IC = 1.0 A
DC base voltage
VBE** VCE = 2.0 V, IC = 50 mA
Collector saturation voltage VCE(sat)** IC = 1.0 A, IB = 50 mA
Base saturation voltage
VBE(sat)** IC = 1.0 A, IB = 50 mA
Output capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT VCE = 2.0 V, IC = 100 mA
Turn-on time
Storage time
Fall time
ton VCC = 10 V, IC = 100 mA
tstg IB1 = −IB2 = 10 mA
tf VBE(off) = −2 to –3 V
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed
100 nA
100 nA
135
600/400
−
81 −
600 640 700 mV
0.15 0.3
V
0.9 1.2
V
19 pF
100 160
MHz
0.07 µs
0.95 µs
0.07 µs
hFE1/hFE CLASSIFICATION L : 135 to 270 K : 200 to 400 U : 300 to 600 (U rank is not available for the 2SD1616A.)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16199EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
1 page | ||
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| PDF Descargar | [ Datasheet 2SD1616A.PDF ] | |
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