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TLP3062F fiches techniques PDF

Toshiba Semiconductor - PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC

Numéro de référence TLP3062F
Description PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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TLP3062F fiche technique
TLP3061F(S),TLP3062F(S),TLP3063F(S)
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC
TLP3061F(S),TLP3062F(S),TLP3063F(S)
Office Machines
Home Appliances
Triac Drivers
Solid State Relays
Unit: mm
The TOSHIBA TLP3061F(S), TLP3062F(S) and TLP3063F(S) of a
gallium arsenide infrared emitting diode optically coupled to a
triac-output photocoupler featuring a zero-cross voltage and is housed in
a six-lead plastic DIP package. All parameters are tested to the
specification of the TLP3061(S) TLP3062(S) and TLP3063(S), including
test conditions and ratings.
Peak Off-state voltage: 600 V (min)
Trigger LED current: 15 mA (max) (TLP3061F(S))
10 mA (max) (TLP3062F(S))
5 mA (max) (TLP3063F(S))
On-state current: 100 mA (max)
Isolation voltage: 5000 Vrms (min)
UL recognized: UL1577, File No. E67349
SEMKO approved: EN60065
EN60950-1
EN60335-1, File No.712796
BSI Approved: BS EN60065:2002, File No.8385
BS EN60950-1:2006, File No.8386
Option (D4) type
VDE approved: DIN EN60747-5-2
Approved No. 40009302
Maximum operating insulation voltage: 1140 VPK
Maximum permissible overvoltage: 8000 VPK
Note: When ordering an EN60747-5-2 approved device,
"Option (D4)" should be designated.
Construction mechanical rating
10.16 mm pitch
TLPxxxxF type
Creepage Distance
Clearance
Insulation Thickness
8.0 mm (min)
8.0 mm (min)
0.5 mm (min)
JEDEC
TOSHIBA
11-7A902
Weight: 0.39 g (typ.)
Pin Configuration
(top view)
1
2
3 ZC
6
4
1: Anode
2: Cathode
3: N.C.
4:Terminal 1
6:Terminal 2
ZC:Zero-cross Circuit
1 2008-11-19

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