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PDF 8NM60 Data sheet ( Hoja de datos )
| Número de pieza | 8NM60 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
8NM60
8.0A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8NM60 is a high voltage super junction MOSFET
and is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in switching
power supplies and adaptors.
FEATURES
* RDS(ON) < 0.78Ω @ VGS = 10V, ID = 4.0A
* Fast Switching Capability
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
8NM60L-TA3-T
8NM60G-TA3-T
8NM60L-TF1-T
8NM60G-TF1-T
8NM60L-TF2-T
8NM60G-TF2-T
8NM60L-TF3-T
8NM60G-TF3-T
8NM60L-TM3-T
8NM60G-TM3-T
8NM60L-TN3-R
8NM60G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R205-088.D
1 page  
8NM60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R205-088.D
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 8NM60.PDF ] | |
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