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PDF 4NM65 Data sheet ( Hoja de datos )
| Número de pieza | 4NM65 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
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UNISONIC TECHNOLOGIES CO., LTD
4NM65
Preliminary
4.0A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 4NM65 is a Super Junction MOSFET, designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristic. This power MOSFET is usually used in
high speed switching applications including power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.
FEATURES
* RDS(ON) <1.4Ω @ VGS = 10 V, ID = 2.0 A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
11
TO-251
TO-220F
1
TO-220F1
1
TO-251S
1
TO-252
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4NM65L-TF3-T
4NM65G-TF3-T
4NM65L-TF1-T
4NM65G-TF1-T
4NM65L-TM3-T
4NM65G-TM3-T
4NM65L-TMS-T
4NM65G-TMS-T
4NM65L-TN3-R
4NM65G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
TO-220F1
TO-251
TO-251S
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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4NM65
Preliminary
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 4NM65.PDF ] | |
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