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Número de pieza | TH58NVG4S0HTA20 | |
Descripción | 16G-BIT (2G x 8 BIT) CMOS NAND E2PROM | |
Fabricantes | Toshiba | |
Logotipo | ||
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No Preview Available ! TH58NVG4S0HTA20
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16 GBIT (2G 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58NVG4S0HTA20 is a single 3.3V 16 Gbit (18,253,611,008 bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (4096 256) bytes 64 pages 8192blocks.
The device has two 4352-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block
unit (256 Kbytes 16 Kbytes: 4352 bytes 64 pages).
The TH58NVG4S0HTA20 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
Organization
Memory cell array
Register
Page size
Block size
x8
4352 128K 8 4
4352 8
4352 bytes
(256K 16K) bytes
Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
Mode control
Serial input/output
Command control
Number of valid blocks
Min 8032 blocks
Max 8192 blocks
Power supply
VCC 2.7V to 3.6V
Access time
Cell array to register 25 s max
Serial Read Cycle
25 ns min (CL=50pF)
Program/Erase time
Auto Page Program
Auto Block Erase
300 s/page typ.
2.5 ms/block typ.
Operating current
Read (25 ns cycle)
Program (avg.)
Erase (avg.)
Standby
30 mA max.
30 mA max
30 mA max
200 A max
Package
TSOP I 48-P-1220-0.50 (Weight: 0.56 g typ.)
8 bit ECC for each 512Byte is required.
1 2016-06-30C
1 page TH58NVG4S0HTA20
VALID BLOCKS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
NVB Number of Valid Blocks
8032
8192
Blocks
NOTE:
The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.
The first block (Block 0) is guaranteed to be a valid block at the time of shipment.
The specification for the minimum number of valid blocks is applicable over lifetime
The number of valid blocks is on the basis of single plane operations, and this may be decreased with two plane
operations.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
VCC
Power Supply Voltage
2.7 3.6 V
VIH High Level input Voltage
Vcc x 0.8
VCC 0.3
V
VIL Low Level Input Voltage
* 2 V (pulse width lower than 20 ns)
0.3*
Vcc x 0.2
DC CHARACTERISTICS (Ta 0 to 70℃, VCC 2.7 to 3.6V)
SYMBOL
PARAMETER
CONDITION
IIL
ILO
ICCO1
ICCO2
ICCO3
ICCS
Input Leakage Current
Output Leakage Current
Serial Read Current
Programming Current
Erasing Current
Standby Current
VIN 0 V to VCC
VOUT 0 V to VCC
CE VIL, IOUT 0 mA, tcycle 25 ns
CE VCC 0.2 V, WP 0 V/VCC
MIN
TYP.
MAX
40
40
30
30
30
200
V
UNIT
A
A
mA
mA
mA
A
VOH
High Level Output Voltage IOH 0.1 mA
Vcc – 0.2
V
VOL Low Level Output Voltage IOL 0.1 mA
IOL
( RY /BY )
Output current of RY /BY
pin VOL 0.2 V
0.2 V
4 mA
5 2016-06-30C
5 Page Read Cycle Timing Diagram
CLE
CE
WE
tCLS tCLH
tCS tCH
tWC
tALH tALS
TH58NVG4S0HTA20
tCLS tCLH
tCS tCH
tCLR
tALH tALS
ALE
RE
I/O
RY /BY
tDS tDH
00h
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH
CA0 CA8 PA0 PA8 PA16
to 7 to 12 to 7 to 15 to 17
Col. Add. N
tR
tWB
tDS tDH
30h
tRC
tRR tCEA
tREA DOUT DOUT
N N1
Data out from
Col. Add. N
Read Cycle Timing Diagram: When Interrupted by CE
CLE
CE
tCLS
tCS
tCLH
tCH
tWC
WE
tALH tALS
tCLS tCLH
tCS tCH
tALH tALS
ALE
RE
I/O
RY /BY
tDS tDH
00h
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH
CA0 CA8 PA0 PA8 PA16
to 7 to 12 to 7 to 15 to 17
Col. Add. N
tR
tWB
tDS tDH
30h
tCLR
tCSD
tRC tCHZ
tRHZ
tRR tCEA tRHOH
tREA DOUT
N
DOUT
N1
Col. Add. N
11 2016-06-30C
11 Page |
Páginas | Total 30 Páginas | |
PDF Descargar | [ Datasheet TH58NVG4S0HTA20.PDF ] |
Número de pieza | Descripción | Fabricantes |
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