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Datasheet FP5453-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
FP5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FP5001 | PWM CONTROL IC Technology
GENERAL DESCRIPTION
FP5001
PWM CONTROL IC WITH SCP/DTC FUNCTION
The FP5001, a 1-chi p co mposed of o pen collector tran sistor o utput pulse-wi dth-modulation control circuits with an error amplifier and dead-time comparators (DTC), the FP5001 contains a 1.0V precision voltage reference  Feeling Technology data | | |
| 2 | FP5001 | PWM Controller FP5001
PWM Controller With SCP / DTC Function
General Description
The FP5001 is a single chip pulse -width-modulation controlle r co mposed of an open colle ctor transistor output, an error amplifier and duty control comparators (DTC). The FP5001 contains a 1.0V precision voltage referen ce regulat Feeling Technology controller | | |
| 3 | FP5003 | High Frequency PWM Controller FP5003 High Frequency PWM Controller With Short Circuit Restart
General Description
The FP5003, a high performance monolithic IC, includes adjustable frequency oscillator, error amplifier for pulse width modulation (PWM) control, 1.0V precision voltage reference, under-voltage lockout circuit (UVLO Feeling Technology controller | | |
| 4 | FP502 | DC-DC Converter Applications Ordering number:EN5263
FP502
N-Channel Silicon MOSFET Silicon Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type with a high-speed N-channel MOSFET and a low-forward voltage Schottky barrier diode contained in the PCP4 package, saving the mount space greatly.
Package D  Sanyo Semicon Device converter | | |
| 5 | FP50F | RECTIFIER STACKS 2.2 A FORWARD CURRENT 3000 NS RECOVERY TIME New Jersey Semiconductor rectifier | | |
| 6 | FP50N06L | 50A/ 60V/ 0.022 Ohm/ Logic Level N-Channel Power MOSFETs RFG50N06LE, RFP50N06LE, RF1S50N06LESM
Data Sheet October 1999 File Number 4072.3
50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs
These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approac  Intersil Corporation mosfet | | |
| 7 | FP50R12KS4C | IGBT-Module Technische Information / Technical Information
IGBT-Module IGBT-Modules
FP50R12KS4C
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage
Durc  eupec igbt | |
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