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Toshiba - SILICON GATE CMOS STATIC RAM

Numéro de référence TC551664J-25
Description SILICON GATE CMOS STATIC RAM
Fabricant Toshiba 
Logo Toshiba 





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TC551664J-25 fiche technique
TOSHIBA
11:551664]-15/20/25
SILICON GATE CMOS
65,536 WORD x 16 BIT CMOS STATIC RAM
Description
The TCEib 166L1-) is Gt 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and
opemtfyj from a ~;ingle 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.
The I Uh1664,J features low power dissipation when the device is deselected using chip enable (CE), and has an output
Hf1alJle Input (OE:.1 fOt' fast memory access. Byte access is supported by upper and lower byte controls.
The TCS~)1664J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and out-
puts are 11 L compatible.
The TC5E)1664,j is available in a 400mil width, 44-pin SOJ suitable for high density surface assembly.
Features
• Fast access time
TC551 Gfi4J 1Ei 15ns (max.)
- TCb51f3(l!kj -20 20ns (max.)
TCb~) 1He'LJ 2b 25ns (max.)
,-------• L.ow power dlssipalion
- ---~"-----
-
1~~~~I~~J~~t~i~L~_L~~~--+1-2-~-OO-+----t--+---+----t
Pin Connection (Top View)
TCSS1664J
Standby:
1mA (max.)
~3ingle 5V power supply: 5V±10%
• Fully static operation
• Inputs and outputs TIL compatible
• Output buffor control:
OE
• Data byte controls:
LB, UB
• Package:
SOJ44-P-400
Pin Names
b~~~~iI-----~
dress Inputs
ta Inputs/Outputs
-------
ip Enable Input
._-
~-+:~ite Enable Input
tput Enable Input
---
ill,UB
Oata Byte Control Inputs
-----.-----
--{~-~~I~wer (+5V)
und
--_._-,
-_ ...._--------' --
Connection
~--,,- ---
Voo
GNO
1/05
1/06
1/07
1/08
WE
A1S
A14
A13
A12
NC
TOSHIBA AMERICA ELECTRONIC COMPDNENTS, INC.
8-121

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