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PDF TC551402J-30 Data sheet ( Hoja de datos )
| Número de pieza | TC551402J-30 | |
| Descripción | CMOS SRAM | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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TOSHIBA
11:551402J-20/25/30
4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM
Description
The TC551402J is a 4,194,304 bit high speed CMOS static random access memory that is configurable to an organization of
either 4,194,304 words by 1 bit or 1,048,576 words by 4 bits when power is initially applied to the device. The mode (x1/x4) is
selected by the input level of pin 17 (81/84). The TC551402J operates from a single 5V supply. Toshiba's advanced CMOS tech-
nology and circuit design enable high speed operation.
The TC551402J features low power dissipation when the SRAM is deselected using chip enable (CE), and has an output
enable input (OE) for fast memory access. It is suitable for use in high speed applications such as cache memory, high speed stor-
age, and main memory. All inputs and outputs are TIL compatible.
The TC551402J is available in a 32-pin, 400mil SOJ package suitable for high density assembly.
Features
Pin Connection (Top View)
• Fast access time
- TC551402J-20 20ns (max.)
- TC551402J-25 25ns (max.)
- TC551402J-30 30ns (max.)
• Low power dissipation
- Operation:
- TC551402J-20 160mA (max.)
- TC551402J-25 160mA (max.)
- TC551402J-30 150mA (max.)
- Standby:
10mA (max.)
• Fully static operation
• Single power supply: 5V±10%
• Output buffer control: OE
• Inputs and outputs TIL compatible
• Separate data 1/0 (x1 mode)
• Common data 1/0 (x4 mode)
• Package
- TC551402J: SOJ32-P-400A
Pin Names
AO - A21
Address Inputs
AO
Al
A2
A3
A4
AS
CE
Voo
GND
D
WE
A6
A7
A8
A9
Al0
AO
Al
A2
A3
A4
CE
1/01
Voo
GND
1102
WE
AS
A6
A7
A8
A9
A19
A18
A 17
A16
A15
OE
1/04
GND
VOD
1103
A14
A13
A12
All
A10
81/B4
A2l
A20
A19
A18
A17
A16
OE
GND
VOO
Q
A15
A14
A13
A12
A1l
Bl/B4
1/01 - 1/04 Data Inputs/Outputs
D Data Input
Q Data Output
CE Chip Enable Input
WE Write Enable Input
OE Output Enable Input
V DD
GND
Power (+5V)
Ground
B1/B4
Bit Select (x1/x4)
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
8-145
1 page  
Timing Waveforms
Read Cycle (2)
ADDRESSES
Static RAM
Q
Write Cycle 1 (5) (WE Controlled Write)
ADDRESSES
twc
Q
D
TC551402J-20/25/30
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
149
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TC551402J-30.PDF ] | |
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